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Science 22 December 2000:
Vol. 290. no. 5500, p. 2209
DOI: 10.1126/science.290.5500.2209a
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This Week in Science

Silicon dominates semiconductor microelectronics, but the fabrication of silicon-based optical devices, which would allow for a seamless and fully integrated optoelectronics technology, is still challenging. The indirect band gap of silicon, a property shared with other group IV elements such as germanium, has presented a considerable barrier to its use in optical applications (and other materials) such as GaAs, are typically used instead. Using a quantum-cascade design that involves a series of coupled and carefully deposited Si and SiGe quantum wells, Dehlinger et al. (p. 2277) demonstrate electroluminescent behavior from such a structure. This single-band design overcomes the limitations of indirect gap materials.




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Science. ISSN 0036-8075 (print), 1095-9203 (online)