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ReportsCurrent-Induced Magnetization Switching with a Spin-Polarized Scanning Tunneling Microscope 
Switching the magnetization of a magnetic bit by injection of a spin-polarized current offers the possibility for the development of innovative high-density data storage technologies. We show how individual superparamagnetic iron nanoislands with typical sizes of 100 atoms can be addressed and locally switched using a magnetic scanning probe tip, thus demonstrating current-induced magnetization reversal across a vacuum barrier combined with the ultimate resolution of spin-polarized scanning tunneling microscopy. Our technique allows us to separate and quantify three fundamental contributions involved in magnetization switching (i.e., current-induced spin torque, heating the island by the tunneling current, and Oersted field effects), thereby providing an improved understanding of the switching mechanism. Institute of Applied Physics and Microstructure Research Center, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany. * These authors contributed equally to this work.
¶ To whom correspondence should be addressed. E-mail: skrause{at}physnet.uni-hamburg.de
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Present address: Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA. 
Present address: Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA. 
Science. ISSN 0036-8075 (print), 1095-9203 (online)
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