Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure
Yoichi Kubota,*
Kenji Watanabe,
Osamu Tsuda,
Takashi Taniguchi
Materials emitting light in the deep ultraviolet region around
200 nanometers are essential in a wide-range of applications,
such as information storage technology, environmental protection,
and medical treatment. Hexagonal boron nitride (hBN), which
was recently found to be a promising deep ultraviolet light
emitter, has traditionally been synthesized under high pressure
and at high temperature. We successfully synthesized high-purity
hBN crystals at atmospheric pressure by using a nickel-molybdenum
solvent. The obtained hBN crystals emitted intense 215-nanometer
luminescence at room temperature. This study demonstrates an
easier way to grow high-quality hBN crystals, through their
liquid-phase deposition on a substrate at atmospheric pressure.
* To whom correspondence should be addressed. E-mail: kubota.yoichi{at}nims.go.jp
