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Originally published in Science Express on 24 August 2006
Science 29 September 2006:
Vol. 313. no. 5795, pp. 1942 - 1945
DOI: 10.1126/science.1131091
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Reports

Tunable Quasi-Two-Dimensional Electron Gases in Oxide Heterostructures

S. Thiel,1 G. Hammerl,1 A. Schmehl,2 C. W. Schneider,1 J. Mannhart1*

We report on a large electric-field response of quasi–two-dimensional electron gases generated at interfaces in epitaxial heterostructures grown from insulating oxides. These device structures are characterized by doping layers that are spatially separated from high-mobility quasi–two-dimensional electron gases and therefore present an oxide analog to semiconducting high–electron mobility transistors. By applying a gate voltage, the conductivity of the electron gases can be modulated through a quantum phase transition from an insulating to a metallic state.

1 Experimental Physics VI, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-86135 Augsburg, Germany.
2 Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802–5005, USA.

* To whom correspondence should be addressed. E-mail: jochen.mannhart{at}physik.uni-augsburg.de

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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Orbital Reconstruction and Covalent Bonding at an Oxide Interface.
J. Chakhalian, J. W. Freeland, H.-U. Habermeier, G. Cristiani, G. Khaliullin, M. van Veenendaal, and B. Keimer (2007)
Science 318, 1114-1117
   Abstract »    Full Text »    PDF »
Superconducting Interfaces Between Insulating Oxides.
N. Reyren, S. Thiel, A. D. Caviglia, L. F. Kourkoutis, G. Hammerl, C. Richter, C. W. Schneider, T. Kopp, A.-S. Ruetschi, D. Jaccard, et al. (2007)
Science 317, 1196-1199
   Abstract »    Full Text »    PDF »


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Science. ISSN 0036-8075 (print), 1095-9203 (online)