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Science 25 November 2005:
Vol. 310. no. 5752, pp. 1304 - 1307
DOI: 10.1126/science.1118798
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Reports

Encoding Electronic Properties by Synthesis of Axial Modulation-Doped Silicon Nanowires

Chen Yang,1* Zhaohui Zhong,1* Charles M. Lieber1,2{dagger}

We describe the successful synthesis of modulation-doped silicon nanowires by achieving pure axial elongation without radial overcoating during the growth process. Scanning gate microscopy shows that the key properties of the modulated structures—including the number, size, and period of the differentially doped regions—are defined in a controllable manner during synthesis, and moreover, that feature sizes to less than 50 nanometers are possible. Electronic devices fabricated with designed modulation-doped nanowire structures demonstrate their potential for lithography-independent address decoders and tunable, coupled quantum dots in which changes in electronic properties are encoded by synthesis rather than created by conventional lithography-based techniques.

1 Department of Chemistry and Chemical Biology,
2 Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA.

* These authors contributed equally to this work.

{dagger} To whom correspondence should be addressed. E-mail: cml{at}cmliris.harvard.edu

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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Diameter-dependent dopant location in silicon and germanium nanowires.
P. Xie, Y. Hu, Y. Fang, J. Huang, and C. M. Lieber (2009)
PNAS 106, 15254-15258
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