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Science 7 October 2005:
Vol. 310. no. 5745, pp. 86 - 89
DOI: 10.1126/science.1116703
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Reports

PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

Dmitri V. Talapin* and Christopher B. Murray

Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically "activated" to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 103 to 104; and with current density approaching 3 x 104 amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.

IBM Research Division, T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA.

* To whom correspondence should be addressed. E-mail: dmitrit{at}us.ibm.com

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