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Science 30 July 2004:
Vol. 305. no. 5684, pp. 646 - 648
DOI: 10.1126/science.1098867
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Reports

Engineered Interface of Magnetic Oxides

Hiroyuki Yamada,1,2 Yoshihiro Ogawa,3 Yuji Ishii,1,2 Hiroshi Sato,1,2 Masashi Kawasaki,1,4 Hiroshi Akoh,1,2 Yoshinori Tokura1,3,5

Interface-selective probing of magnetism is a key issue for the design and realization of spin-electronic junction devices. Here, magnetization-induced second-harmonic generation was used to probe the local magnetic properties at the interface of the perovskite ferromagnet La0.6Sr0.4MnO3 with nonmagnetic insulating layers, as used in spin-tunnel junctions. We show that by grading the doping profile on an atomic scale at the interface, robust ferromagnetism can be realized around room temperature. The results should lead to improvements in the performance of spin-tunnel junctions.

1 Correlated Electron Research Center (CERC), National Institute of Advanced Science and Technology (AIST), Tsukuba 305-8562, Japan.
2 Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Tsukuba 305-8562, Japan.
3 Spin Superstructure Project (SSS), Exploratory Research for Advanced Technology (ERATO), Tsukuba 305-8562, Japan.
4 Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
5 Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan.

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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Orbital Reconstruction and Covalent Bonding at an Oxide Interface.
J. Chakhalian, J. W. Freeland, H.-U. Habermeier, G. Cristiani, G. Khaliullin, M. van Veenendaal, and B. Keimer (2007)
Science 318, 1114-1117
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Complexity in Strongly Correlated Electronic Systems.
E. Dagotto (2005)
Science 309, 257-262
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