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Science 12 March 2004:
Vol. 303. no. 5664, pp. 1644 - 1646
DOI: 10.1126/science.1094196
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Reports

Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals

Vikram C. Sundar,1*{dagger} Jana Zaumseil,1*{ddagger} Vitaly Podzorov,2* Etienne Menard,3 Robert L. Willett,1 Takao Someya,1§ Michael E. Gershenson,2 John A. Rogers3||

We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as ~15 cm2/V·s and subthreshold slopes as low as 2nF·V/decade·cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.

1 Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.
2 Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA.
3 Department of Materials Science and Engineering, Department of Chemistry, Beckman Institute and Seitz Materials Research Laboratory, University of Illinois, Urbana-Champaign, IL 61801, USA.



* These authors contributed equally to this work.

{dagger} Present address: IBM, Yorktown Heights, NY 10598, USA.

{ddagger} Present address: Cavendish Laboratory, Cambridge CB3 0HE, UK.

§ Present address: University of Tokyo, Tokyo 264-8505, Japan.

|| To whom correspondence should be addressed. E-mail: jrogers{at}uiuc.edu

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