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Originally published in Science Express on 10 July 2003
Science 15 August 2003:
Vol. 301. no. 5635, pp. 943 - 945
DOI: 10.1126/science.1086608
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Reports

Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor

D. Chiba,1 M. Yamanouchi,1 F. Matsukura,1 H. Ohno1,2*

We report electrical manipulation of magnetization processes in a ferromagnetic semiconductor, in which low-density carriers are responsible for the ferromagnetic interaction. The coercive force HC at which magnetization reversal occurs can be manipulated by modifying the carrier density through application of electric fields in a gated structure. Electrically assisted magnetization reversal, as well as electrical demagnetization, has been demonstrated through the effect. This electrical manipulation offers a functionality not previously accessible in magnetic materials and may become useful for reversing magnetization of nanoscale bits for ultrahigh-density information storage.

1 Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan.
2 Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Corporation, Japan.

* To whom correspondence should be addressed. E-mail: ohno{at}riec.tohoku.ac.jp

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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
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Science. ISSN 0036-8075 (print), 1095-9203 (online)