Gigahertz Electron Spin Manipulation Using Voltage-Controlled g-Tensor Modulation
Y. Kato,12
R. C. Myers,1
D. C. Driscoll,1
A. C. Gossard,1
J. Levy,12
D. D. Awschalom12*
We present a scheme that enables
gigahertz-bandwidth three-dimensional control of electron spins in a
semiconductor heterostructure with the use of a single voltage signal.
Microwave modulation of the Landé g tensor produces
frequency-modulated electron spin precession. Driving at the Larmor
frequency results in g-tensor modulation resonance, which is
functionally equivalent to electron spin resonance but without the use
of time-dependent magnetic fields. These results provide proof of the
concept that quantum spin information can be locally manipulated with
the use of high-speed electrical circuits.
1 Center for Spintronics and Quantum
Computation, University of California, Santa Barbara, CA 93106, USA.
2 Center for Oxide-Semiconductor Materials for
Quantum Computation, University of Pittsburgh, Pittsburgh, PA 15260, USA.
*
To whom correspondence should be addressed. E-mail:
awsch{at}physics.ucsb.edu
