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Science 6 September 2002:
Vol. 297. no. 5587, pp. 1670 - 1672
DOI: 10.1126/science.1074374
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Reports

High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

Jan Isberg,1* Johan Hammersberg,1 Erik Johansson,1 Tobias Wikström,1 Daniel J. Twitchen,2 Andrew J. Whitehead,2 Steven E. Coe,2 Geoffrey A. Scarsbrook2

Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determined by using the time-of-flight technique on thick, intrinsic, freestanding diamond plates and were verified by current-voltage measurements on p-i junction diodes. The improvement of the electronic properties of single-crystal diamond and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.

1 ABB Group Services Center, Corporate Research, Nanotechnology and Innovative Materials Group, Västerås, Sweden.
2 De Beers Industrial Diamonds, King's Ride Park, Ascot, UK.
*   Present address: Division for Electricity Research, Box 539, S-751 21 Uppsala University, Sweden. E-mail: jan.isberg{at}angstrom.uu.se

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