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Science 14 June 2002:
Vol. 296. no. 5575, pp. 1975 - 1976
DOI: 10.1126/science.1072855
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Perspectives

MATERIALS SCIENCE:
Orienting Ferroelectric Films

R. Ramesh and D. G. Schlom

Achieving a new generation of microelectronic devices requires combining silicon with materials, such as ferroelectrics that allow the development of, for example, high density, nonvolatile memories. Ramesh and Schlom describe work (Lee et al.) showing that a class of ferroelectrics that has been particularly challenging to grow, can be grown as a thin film on a silicon substrate with the optimal crystallographic orientation for nonvolatile ferroelectric memories.

R. Ramesh is in the Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, MD 20742, USA. D. G. Schlom is in the Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA.

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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Ferroelectricity in Ultrathin Perovskite Films.
D. D. Fong, G. B. Stephenson, S. K. Streiffer, J. A. Eastman, O. Auciello, P. H. Fuoss, and C. Thompson (2004)
Science 304, 1650-1653
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Science. ISSN 0036-8075 (print), 1095-9203 (online)