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Science 17 May 2002:
Vol. 296. no. 5571, pp. 1293 - 1297
DOI: 10.1126/science.1069336

Reports

Electrochemistry and Electrogenerated Chemiluminescence from Silicon Nanocrystal Quantum Dots

Zhifeng Ding,1 Bernadette M. Quinn,1 Santosh K. Haram,1 Lindsay E. Pell,2 Brian A. Korgel,2* Allen J. Bard1*

Reversible electrochemical injection of discrete numbers of electrons into sterically stabilized silicon nanocrystals (NCs) (~2 to 4 nanometers in diameter) was observed by differential pulse voltammetry (DPV) in N,N'-dimethylformamide and acetonitrile. The electrochemical gap between the onset of electron injection and hole injection--related to the highest occupied and lowest unoccupied molecular orbitals--grew with decreasing nanocrystal size, and the DPV peak potentials above the onset for electron injection roughly correspond to expected Coulomb blockade or quantized double-layer charging energies. Electron transfer reactions between positively and negatively charged nanocrystals (or between charged nanocrystals and molecular redox-active coreactants) occurred that led to electron and hole annihilation, producing visible light. The electrogenerated chemiluminescence spectra exhibited a peak maximum at 640 nanometers, a significant red shift from the photoluminescence maximum (420 nanometers) of the same silicon NC solution. These results demonstrate that the chemical stability of silicon NCs could enable their use as redox-active macromolecular species with the combined optical and charging properties of semiconductor quantum dots.

1 Department of Chemistry and Biochemistry,
2 Department of Chemical Engineering, Center for Nano- and Molecular Science and Technology, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712, USA.
*   To whom correspondence should be addressed. E-mail: ajbard{at}mail.utexas.edu (A.J.B.); korgel{at}mail.che.utexas.edu (B.A.K.).


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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
High surface area silicon materials: fundamentals and new technology.
J. M Buriak (2006)
Phil Trans R Soc A 364, 217-225
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