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Science 25 February 2000: Vol. 287. no. 5457, pp. 1471 - 1473 DOI: 10.1126/science.287.5457.1471
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Reports
Control of Thickness and Orientation of Solution-Grown Silicon Nanowires
Justin D. Holmes,
Keith P. Johnston,
R. Christopher Doty,
Brian A. Korgel
*
Bulk quantities of defect-free silicon (Si) nanowires
with nearly uniform diameters ranging from 40 to 50 angstroms were
grown to a length of several micrometers with a supercritical fluid solution-phase approach. Alkanethiol-coated gold nanocrystals (25 angstroms in diameter) were used as uniform seeds to direct one-dimensional Si crystallization in a solvent heated and pressurized above its critical point. The orientation of the Si nanowires produced
with this method could be controlled with reaction pressure. Visible
photoluminescence due to quantum confinement effects was observed,
as were discrete optical transitions in the ultraviolet-visible absorbance spectra.
Department of Chemical Engineering and Texas Materials
Institute, University of Texas, Austin, TX 78712, USA.
*
To whom correspondence should be addressed. E-mail:
korgel{at}mail.che.utexas.edu
Present address: Department of Chemistry, University College
Cork, Ireland.
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