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Science 5 February 1999:
Vol. 283. no. 5403, pp. 822 - 824
DOI: 10.1126/science.283.5403.822
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Reports

Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators

C. D. Dimitrakopoulos, * S. Purushothaman, J. Kymissis, A. Callegari, J. M. Shaw

The gate bias dependence of the field-effect mobility in pentacene-based insulated gate field-effect transistors (IGFETs) was interpreted on the basis of the interaction of charge carriers with localized trap levels in the band gap. This understanding was used to design and fabricate IGFETs with mobility of more than 0.3 square centimeter per volt per second and current modulation of 105, with the use of amorphous metal oxide gate insulators. These values were obtained at operating voltage ranges as low as 5 volts, which are much smaller than previously reported results. An all-room-temperature fabrication process sequence was used, which enabled the demonstration of high-performance organic IGFETs on transparent plastic substrates, at low operating voltages for organic devices.

IBM Research Division, T. J. Watson Research Center, Post Office Box 218, Yorktown Heights, NY 10598, USA.
*   To whom correspondence should be addressed. E-mail address: dimitrak{at}us.ibm.com

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