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Science 14 August 1998:
Vol. 281. no. 5379, pp. 956 - 961
DOI: 10.1126/science.281.5379.956
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Review

The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

Shuji Nakamura

REVIEW

High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based emitting devices. The blue and green InGaN quantum-well structure light-emitting diodes with luminous efficiencies of 5 and 30 lumens per watt, respectively, can be made despite the large number of threading dislocations (1 × 108 to 1 × 1012 cm-2). Epitaxially laterally overgrown GaN on sapphire reduces the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO2 mask area can have a lifetime of more than 10,000 hours. Dislocations increase the threshold current density of the laser diodes.

The author is in the Department of Research and Development, Nichia Chemical Industries, 491 Oka, Kaminaka, Anan, Tokushima 774, Japan. E-mail: shuji{at}nichia.co.jp

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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
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