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Science 17 July 1998:
Vol. 281. no. 5375, pp. 407 - 409
DOI: 10.1126/science.281.5375.407
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Reports

Room Temperature-Operating Spin-Valve Transistors Formed by Vacuum Bonding

D. J. Monsma, * R. Vlutters, J. C. Lodder

Functional integration between semiconductors and ferromagnets was demonstrated with the spin-valve transistor. A ferromagnetic multilayer was sandwiched between two device-quality silicon substrates by means of vacuum bonding. The emitter Schottky barrier injected hot electrons into the spin-valve base. The collector Schottky barrier accepts only ballistic electrons, which makes the collector current very sensitive to magnetic fields. Room temperature operation was accomplished by preparing Si-Pt-Co-Cu-Co-Si devices. The vacuum bonding technique allows the realization of many ideas for vertical transport devices and forms a permanent link that is useful in demanding adhesion applications.

MESA Research Institute, University of Twente, 7500AE Enschede, Netherlands.
*   To whom correspondence should be addressed. Present address: IBM Almaden Research, 650 Harry Road, San Jose, CA 95120, USA.

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