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Science 12 June 1998:
Vol. 280. no. 5370, pp. 1741 - 1744
DOI: 10.1126/science.280.5370.1741
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Reports

Integrated Optoelectronic Devices Based on Conjugated Polymers

Henning Sirringhaus, * Nir Tessler, Richard H. Friend *

An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance approaches that of inorganic amorphous silicon FETs, with field-effect mobilities of 0.05 to 0.1 square centimeters per volt second and ON-OFF current ratios of >106. The high mobility is attributed to the formation of extended polaron states as a result of local self-organization, in contrast to the variable-range hopping of self-localized polarons found in more disordered polymers. The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.

Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK.
*   To whom correspondence should be addressed.

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