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Science 12 December 1997:
Vol. 278. no. 5345, pp. 1934 - 1936
DOI: 10.1126/science.278.5345.1934
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Reports

Growth of SiO2 at Room Temperature with the Use of Catalyzed Sequential Half-Reactions

Jason W. Klaus, Ofer Sneh, * Steven M. George dagger

Films of silicon dioxide (SiO2) were deposited at room temperature by means of catalyzed binary reaction sequence chemistry. The binary reaction SiCl4 + 2H2O rightarrow  SiO2 + 4HCl was separated into SiCl4 and H2O half-reactions, and the half-reactions were then performed in an ABAB ... sequence and catalyzed with pyridine. The pyridine catalyst lowered the deposition temperature from >600 to 300 kelvin and reduced the reactant flux required for complete reactions from ~109 to ~104 Langmuirs. Growth rates of ~2.1 angstroms per AB reaction cycle were obtained at room temperature for reactant pressures of 15 millitorr and 60-second exposure times with 200 millitorr of pyridine. This catalytic technique may be general and should facilitate the chemical vapor deposition of other oxide and nitride materials.

Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309, USA.
*   Present address: Lucent Technologies-Bell Laboratories, Optoelectronics Center, Breinigsville, PA 18031, USA.

dagger    To whom correspondence should be addressed.

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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources.
M. Ritala, K. Kukli, A. Rahtu, P. I. Räisänen, M. Leskelä, T. Sajavaara, and J. Keinonen (2000)
Science 288, 319-321
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