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Science 16 May 1997:
Vol. 276. no. 5315, pp. 1100 - 1103
DOI: 10.1126/science.276.5315.1100
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Reports

Local, Nonvolatile Electronic Writing of Epitaxial Pb(Zr0.52Ti0.48)O3/SrRuO3 Heterostructures

C. H. Ahn, T. Tybell, L. Antognazza, K. Char, R. H. Hammond, M. R. Beasley, Ø. Fischer, J.-M. Triscone

A scanning probe microscope was used to induce local, nonvolatile field effects in epitaxial, ferroelectric Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures. Field-effected regions with linewidths as small as 3500 angstroms were written by locally switching the polarization field of the Pb(Zr0.52Ti0.48)O3 layer; the electronic density of the underlying metallic SrRuO3 layer was modified and the sheet resistance was changed by up to 300 ohms per square. This procedure is completely reversible and allows submicrometer electronic features to be written directly in two dimensions, with no external electrical contacts or lithographic steps required.

C. H. Ahn, T. Tybell, L. Antognazza, Ø. Fischer, J.-M. Triscone, Département de Physique de la Matière Condensée, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
K. Char, Conductus Inc., 969 West Maude Avenue, Sunnyvale, CA 94086, USA.
R. H. Hammond and M. R. Beasley, Department of Applied Physics, Stanford University, Stanford, CA 94305, USA.

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