A Benzene-Thermal Synthetic Route to Nanocrystalline GaN
Yi Xie,
Yitai Qian,
*
Wenzhong Wang,
Shuyuan Zhang,
Yuheng Zhang
A thermal reaction of Li3N and GaCl3 in
which benzene was used as the solvent under pressure has been carried
out for the preparation of 30-nanometer particles of gallium nitride
(GaN) at 280°C. This temperature is much lower than that of
traditional methods, and the yield of GaN reached 80%. The x-ray
powder diffraction pattern indicated that sample was mainly
hexagonal-phase GaN with a small fraction of rocksalt-phase GaN, which
has a lattice constant a = 4.100 angstroms. This rocksalt structure,
which had been observed previously only under high pressure (at least
37 gigapascals) was observed directly with high-resolution electron
microscopy.
Y. Xie and Y. Qian, Structure Research Laboratory and Department
of Applied Chemistry, University of Science and Technology of China,
Hefei, Anhui 230026, People's Republic of China.
W. Wang, Department of Applied Chemistry, University of Science and
Technology of China, Hefei, Anhui 230026, People's Republic of China.
S. Zhang and Y. Zhang, Structure Research Laboratory, University of
Science and Technology of China, Hefei, Anhui 230026, People's
Republic of China.
*
To whom correspondence should be addressed.
