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Science 15 September 1995:
Vol. 269. no. 5230, pp. 1560 - 1562
DOI: 10.1126/science.269.5230.1560
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Articles

Organic Heterostructure Field-Èffect Transistors

A. Dodabalapur 1, H. E. Katz 1, L. Torsi 1, and R. C. Haddon 1

1 AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974, USA.

Organic field-effect transistors have been developed that function as either n-channel or p-channel devices, depending on the gate bias. The two active materials are agr-hexathienylene (agr-6T) and C60. The characteristics of these devices depend mainly on the molecular orbital energy levels and transport properties of agr-6T and C60. The observed effects are not unique to the two materials chosen and can be quite universal provided certain conditions are met. The device can be used as a building block to form low-cost, low-power complementary integrated circuits.

Submitted on April 18, 1995
Accepted on July 14, 1995


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