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Science 25 March 1994:
Vol. 263. no. 5154, pp. 1751 - 1753
DOI: 10.1126/science.263.5154.1751
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Articles

Gallium Arsenide Transistors: Realization Through a Molecularly Designed Insulator

Phillip P. Jenkins 1, Andrew N. MacInnes 2, Massood Tabib-Azar 3, and Andrew R. Barron 3

1 NYMA, 2001 Aerospace Parkway, Brookpark, OH 44142, USA.
2 Gallia, Inc., Weston, MA 02193, USA.
3 Department of Chemistry, Harvard University, Cambridge, MA 02138, USA.

A GaAs-based transistor, analogous to commercial silicon devices, has been fabricated with vapor-deposited cubic GaS as the insulator material. The n-channel, depletion mode, GaAs field-effect transistor shows, in addition to classical transistor characteristics, a channel mobility of 4665.6 square centimeters per volt per second, an interfacial trap density of 1011 per electron volt per square centimeter, and a transconductance of 7 millisiemens for a 5-micrometer gate length at a gate voltage of 8 volts. Furthermore, the GaAs transistor shows an on-to-off resistance ratio comparable to that of commercial devices.

Submitted on December 9, 1993
Accepted on February 25, 1994


THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Gallium Arsenide Modulates Proteolytic Cathepsin Activities and Antigen Processing by Macrophages.
T. A. Lewis2, C. B. Hartmann, and K. L. McCoy (1998)
J. Immunol. 161, 2151-2157
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