Polycrystalline CVD Diamond Films with High Electrical Mobility
M. A. Plano 1,
M. I. Landstrass 1,
L. S. Pan 2,
S. Han 2,
D. R. Kania 1,
S. McWilliams 1, and
J. W. Ager III 3
1 Crystallume, 125 Constitution Drive, Menlo Park, CA 94025
2 Lawrence Livermore National Laboratory, L-476, 7000 East Avenue, Livermore, CA 94550
3 Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
Advances in the deposition process have led to dramatic improvements in the electronic properties of polycrystalline diamond films produced by chemical vapor deposition (CVD). It is now possible to produce CVD diamond with properties approaching those of IIa natural diamonds. The combined electron-hole mobility, as measured by transient photoconductivity at low carrier density, is 4000 square centimeters per volt per second at an electric field of 200 volts per centimeter and is comparable to that of the best single-crystal IIa natural diamonds. Carrier lifetimes measured under the same conditions are 150 picoseconds for the CVD diamond and 300 picoseconds for single-crystal diamond. The collection distance at a field of 10 kilovolts per centimeter is 15 micrometers for the CVD diamond as compared to 30 micrometers for natural diamonds. The electrical qualities appear to correlate with the width of the diamond Raman peak. Also, although the collection distance at the highest fields in the films nearly equals the average grain size, there is no evidence of deleterious grain boundary effects.
Submitted on December 7, 1992
Accepted on February 19, 1993
