Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe2 Crystals
David Cahen 1,
Jean-Marc Gilet 1,
Claus Schmitz 1,
Leonid Chernyak 1,
Konstantin Gartsman 1, and
Abram Jakubowicz 1
1 Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel
Multiple-junction structures were formed, on a microscopic scale, at room temperature, by the application of a strong electric field across originally homogeneous crystals of the ternary chalcopyrite semiconductor CulnSe2. After removal of the electric field, the structures were examined with electron beam-induced current microscopy and their current-voltage characteristics were measured. Bipolar transistor action was observed, indicating that sharp bulk junctions can form in this way at low ambient temperatures. The devices are stable under normal (low-voltage) operating conditions. Possible causes for this effect, including electromigration and electric field-assisted defect reactions, are suggested.
Submitted on May 11, 1992
Accepted on August 5, 1992
