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Science 9 January 1987:
Vol. 235. no. 4785, pp. 172 - 176
DOI: 10.1126/science.235.4785.172
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Articles

Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices

FEDERICO CAPASSO 1

1 Distinguished Member of Technical Staff at AT&T Bell Laboratories, Murray Hill, NJ 07974.

Band-gap engineering is a powerful technique for the design of new semiconductor materials and devices. Heterojunctions and modern growth techniques, such as molecular beam epitaxy, allow band diagrams with nearly arbitrary and continuous band-gap variations to be made. The transport properties of electrons and holes can be independently and continuously tuned for a given application. A new generation of devices with unique capabilities, ranging from solid-state photomultipliers to resonant tunneling transistors, is emerging from this approach.


THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Bidirectional Semiconductor Laser.
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Quantum Cascade Laser.
J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y. Cho (1994)
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Artificially Structured Thin-Film Materials and Interfaces.
V. NARAYANAMURTI (1987)
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