Anomalous Temperature Dependence for a Partial Vapor Pressure
JAMES A. ROBERTS JR. 1 and
ALAN W. SEARCY 1
1 Materials and Molecular Research Division, Lawrence Berkeley Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley 94720
In a limited temperature range the partial pressure of gallium subsulfide (Ga2S) above gallium sesquisulfide (Ga2S3) increases when the temperature is decreased. The anomaly in the partial pressure is caused by changes with temperature in the equilibrium compositions of two solid phases that coexist at 1228° ± 3°K. At this temperature the solids differ in sulfur content by 0.4 atomic percent sulfur.
Submitted on August 23, 1976
Revised on November 16, 1976