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Science 30 July 1965:
Vol. 149. no. 3683, pp. 535 - 537
DOI: 10.1126/science.149.3683.535
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Articles

Germanium and Silicon Disulfides: Structure and Synthesis

C. T. Prewitt 1 and H. S. Young 1

1 Central Research Department, Experimental Station, E. I. du Pont de Nemours and Company, Wilmington, Delaware 19898

Crystal structures of the tetragonal forms of germanium and silicon disulfide are similar and consist of (SiS4)4- and (GeS4)4- tetrahedra which share vertices to form three-dimensional networks. These tetragonal materials, synthesized at high pressure and temperature, are different from the previously known germanium and silicon disulfides.

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Science. ISSN 0036-8075 (print), 1095-9203 (online)