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Published Online June 28, 2007
Science DOI: 10.1126/science.1144672

Reports

Submitted on May 4, 2007
Accepted on June 21, 2007

Quantized Transport in Graphene p-n Junctions in a Magnetic Field

D. A. Abanin 1 and L. S. Levitov 1*

1 Department of Physics, Center for Materials Sciences & Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA.

* To whom correspondence should be addressed.
L. S. Levitov , E-mail: levitov@mit.edu

Recent experimental work on locally gated graphene layers resulting in p-n junctions have revealed quantum Hall effect in their transport behavior. We explain the observed conductance quantization which is fractional in the bipolar regime and integer in the unipolar regime in terms of quantum Hall edge modes propagating along and across the p-n interface. In the bipolar regime the electron and hole modes can mix at the p-n boundary, leading to current partition and quantized shot noise plateaus similar to those of conductance, while in the unipolar regime transport is noiseless. These quantum Hall phenomena reflect the massless Dirac character of charge carriers in graphene, with particle-hole interplay manifest in mode mixing and noise in the bipolar regime.


THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene.
J. R. Williams, L. DiCarlo, and C. M. Marcus (2007)
Science 317, 638-641
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Science. ISSN 0036-8075 (print), 1095-9203 (online)