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Published Online June 28, 2007
Science DOI: 10.1126/science.1144657

Reports

Submitted on May 4, 2007
Accepted on June 15, 2007

Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene

J. R. Williams 1, L. DiCarlo 2, C. M. Marcus 2*

1 School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138, USA.
2 Department of Physics, Harvard University, Cambridge, MA 02138, USA.

* To whom correspondence should be addressed.
C. M. Marcus , E-mail: marcus{at}harvard.edu

The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and 3/2 times the quantum of conductance, e2/h, consistent with recent theory. Beyond enabling investigations in condensed-matter physics, the local-gating technique demonstrated here sets the foundation for a future graphene-based bipolar technology.


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Science. ISSN 0036-8075 (print), 1095-9203 (online)