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Published Online April 13, 2006
Science DOI: 10.1126/science.1125925

Reports

Submitted on February 7, 2006
Accepted on April 5, 2006

Electronic Confinement and Coherence in Patterned Epitaxial Graphene

Claire Berger 1, Zhimin Song 1, Xuebin Li 1, Xiaosong Wu 1, Nate Brown 1, Cecile Naud 2, Didier Mayou 2, Tianbo Li 1, Joanna Hass 1, Alexei N. Marchenkov 1, Edward H. Conrad 1, Phillip N. First 1, Walt A. de Heer 1*

1 School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA.
2 Laboratoire d'Études des Propriétés Électroniques des Solides, CNRS, BP166, 38042 Grenoble Cedex, France.

* To whom correspondence should be addressed.
Walt A. de Heer , E-mail: deheer{at}electra.physics.gatech.edu

Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface, and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond one micrometer at 4K, with mobilities exceeding 2.5 m2/Vs. All-graphene electronically coherent devices and device architectures are envisaged.


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Science. ISSN 0036-8075 (print), 1095-9203 (online)