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Research Articles
Submitted on September 21, 2004 Observation of the Spin Hall Effect in Semiconductors
1 Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106, USA. * To whom correspondence should be addressed.
Electrically induced electron-spin polarization near the edges of a semiconductor channel is detected and imaged using Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained GaAs and strained InGaAs samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.
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Science. ISSN 0036-8075 (print), 1095-9203 (online)
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