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Reports
Submitted on July 6, 2001 Deposition of Conformal Copper and Nickel Films from Supercritical Carbon Dioxide
1 Department of Chemical Engineering, University of Massachusetts, Amherst, MA 01003, USA. * To whom correspondence should be addressed. E-mail: watkins{at}ecs.umass.edu. Device quality copper and nickel films were deposited onto planar and etched silicon substrates by the reduction of soluble organometallic compounds with hydrogen in supercritical carbon dioxide solution. Exceptional step coverage on complex surfaces and complete filling of high aspect ratio, sub-100 nanometer - wide features were achieved. Nickel was deposited at 60°C by the reduction of bis(cyclopentadienyl)nickel and copper was deposited from either Cu(I) or Cu(II) compounds onto the native oxide of silicon or metal nitrides with seed layers at temperatures up to 200°C and directly on each surface at temperatures above 250°C. The latter approach provides a single-step means for achieving high aspect ratio feature fill necessary for Cu interconnect structures in future generations of integrated circuits.
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Science. ISSN 0036-8075 (print), 1095-9203 (online)
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