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Science 17 April 2009:
Vol. 324. no. 5925, pp. 367 - 370
DOI: 10.1126/science.1169678
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Reports
A Ferroelectric Oxide Made Directly on Silicon
Maitri P. Warusawithana,1
Cheng Cen,2
Charles R. Sleasman,2
Joseph C. Woicik,3
Yulan Li,4
Lena Fitting Kourkoutis,5
Jeffrey A. Klug,6
Hao Li,7
Philip Ryan,8
Li-Peng Wang,9,10
Michael Bedzyk,6,11
David A. Muller,5
Long-Qing Chen,4
Jeremy Levy,2
Darrell G. Schlom1*
Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering technological advancement. With fundamental limits to this technology close at hand, alternatives to silicon dioxide are being pursued to enable new functionality and device architectures. We achieved ferroelectric functionality in intimate contact with silicon by growing coherently strained strontium titanate (SrTiO 3) films via oxide molecular beam epitaxy in direct contact with silicon, with no interfacial silicon dioxide. We observed ferroelectricity in these ultrathin SrTiO 3 layers by means of piezoresponse force microscopy. Stable ferroelectric nanodomains created in SrTiO 3 were observed at temperatures as high as 400 kelvin.
2 Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA.
3 National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
4 Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA.
5 School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA.
6 Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208, USA.
7 Applied Research and Technology Center, Motorola Inc., Tempe, AZ 85284, USA.
8 Ames Laboratory, Ames, IA 50011, USA.
9 Intel Corporation, Santa Clara, CA 95052, USA.
10 TricornTech, San Jose, CA 95129, USA.
11 Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA.
* To whom correspondence should be addressed. E-mail: schlom{at}cornell.edu
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