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Originally published in Science Express on 4 October 2001
Science 9 November 2001:
Vol. 294. no. 5545, pp. 1317 - 1320
DOI: 10.1126/science.1065824
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Reports

Logic Circuits with Carbon Nanotube Transistors

Adrian Bachtold,* Peter Hadley, Takeshi Nakanishi, Cees Dekkerdagger

We demonstrate logic circuits with field-effect transistors based on single carbon nanotubes. Our device layout features local gates that provide excellent capacitive coupling between the gate and nanotube, enabling strong electrostatic doping of the nanotube from p-doping to n-doping and the study of the nonconventional long-range screening of charge along the one-dimensional nanotubes. The transistors show favorable device characteristics such as high gain (>10), a large on-off ratio (>105), and room-temperature operation. Importantly, the local-gate layout allows for integration of multiple devices on a single chip. Indeed, we demonstrate one-, two-, and three-transistor circuits that exhibit a range of digital logic operations, such as an inverter, a logic NOR, a static random-access memory cell, and an ac ring oscillator.

Department of Applied Physics, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands.
*   Present address: Laboratoire de Physique de la Matière Condensée, École Normale Superieure, 24 Rue Lhomond, 75005 Paris, France.

dagger    To whom correspondence should be addressed. E-mail: dekker{at}mb.tn.tudelft.nl

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Science. ISSN 0036-8075 (print), 1095-9203 (online)