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Science 2 March 2007:
Vol. 315. no. 5816, pp. 1252 - 1255
DOI: 10.1126/science.1138020
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Reports

The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions

Vadim V. Cheianov,1* Vladimir Fal'ko,1 B. L. Altshuler2,3

The focusing of electric current by a single p-n junction in graphene is theoretically predicted. Precise focusing may be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values. This finding may be useful for the engineering of electronic lenses and focused beam splitters using gate-controlled n-p-n junctions in graphene-based transistors.

1 Physics Department, Lancaster University, Lancaster LA1 4YB, UK.
2 Physics Department, Columbia University, 538 West 120th Street, New York, NY 10027, USA.
3 NEC-Laboratories America, 4 Independence Way, Princeton, NJ 085540, USA.

* To whom correspondence should be addressed. E-mail: v.cheianov{at}lancaster.ac.uk

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Quantized Transport in Graphene p-n Junctions in a Magnetic Field.
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Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene.
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Science. ISSN 0036-8075 (print), 1095-9203 (online)