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Science 18 August 2006:
Vol. 313. no. 5789, pp. 951 - 954
DOI: 10.1126/science.1130681
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Reports

Controlling the Electronic Structure of Bilayer Graphene

Taisuke Ohta,1,2* Aaron Bostwick,1* Thomas Seyller,3 Karsten Horn,2 Eli Rotenberg1{dagger}

We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands. This control over the band structure suggests the potential application of bilayer graphene to switching functions in atomic-scale electronic devices.

1 Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, CA 94720, USA.
2 Department of Molecular Physics, Fritz-Haber-Institut, der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany.
3 Institut für Physik der Kondensierten Materie, Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, D-91058 Erlangen, Germany.

* These authors contributed equally to this work.

{dagger} To whom correspondence should be addressed.

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Science. ISSN 0036-8075 (print), 1095-9203 (online)