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Originally published in Science Express on 15 December 2005
Science 13 January 2006:
Vol. 311. no. 5758, pp. 208 - 212
DOI: 10.1126/science.1121401
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Reports

A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates

Dahl-Young Khang,1,3,4 Hanqing Jiang,2 Young Huang,2* John A. Rogers1,2,3,4*

We have produced a stretchable form of silicon that consists of submicrometer single-crystal elements structured into shapes with microscale, periodic, wavelike geometries. When supported by an elastomeric substrate, this "wavy" silicon can be reversibly stretched and compressed to large levels of strain without damaging the silicon. The amplitudes and periods of the waves change to accommodate these deformations, thereby avoiding substantial strains in the silicon itself. Dielectrics, patterns of dopants, electrodes, and other elements directly integrated with the silicon yield fully formed, high-performance "wavy" metal oxide semiconductor field-effect transistors, p-n diodes, and other devices for electronic circuits that can be stretched or compressed to similarly large levels of strain.

1 Department of Materials Science and Engineering
2 Department of Mechanical and Industrial Engineering
3 Beckman Institute for Advanced Science and Technology
4 Seitz Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA.

* To whom correspondence should be addressed. E-mail: jrogers{at}uiuc.edu (J.A.R); huang9{at}uiuc.edu (Y.H.)

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