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Originally published in Science Express on 11 November 2004
Science 10 December 2004:
Vol. 306. no. 5703, pp. 1910 - 1913
DOI: 10.1126/science.1105514
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Research Articles

Observation of the Spin Hall Effect in Semiconductors

Y. K. Kato, R. C. Myers, A. C. Gossard, D. D. Awschalom*

Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.

Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106, USA.

* To whom correspondence should be addressed. E-mail: awsch{at}physics.ucsb.edu

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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Quantum Spin Hall Insulator State in HgTe Quantum Wells.
M. Konig, S. Wiedmann, C. Brune, A. Roth, H. Buhmann, L. W. Molenkamp, X.-L. Qi, and S.-C. Zhang (2007)
Science 318, 766-770
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Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells.
B. A. Bernevig, T. L. Hughes, and S.-C. Zhang (2006)
Science 314, 1757-1761
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Imaging Spin Transport in Lateral Ferromagnet/Semiconductor Structures.
S. A. Crooker, M. Furis, X. Lou, C. Adelmann, D. L. Smith, C. J. Palmstrom, and P. A. Crowell (2005)
Science 309, 2191-2195
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Science. ISSN 0036-8075 (print), 1095-9203 (online)