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Science 5 November 2004:
Vol. 306. no. 5698, pp. 1005 - 1009
DOI: 10.1126/science.1103218
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Reports

Enhancement of Ferroelectricity in Strained BaTiO3 Thin Films

K. J. Choi,1 M. Biegalski,2 Y. L. Li,2 A. Sharan,2 J. Schubert,3 R. Uecker,4 P. Reiche,4 Y. B. Chen,5 X. Q. Pan,5 V. Gopalan,2 L.-Q. Chen,2 D. G. Schlom,2 C. B. Eom1*

Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

1 Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI 53706, USA.
2 Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA.
3 Institut für Schichten und Grenzflächen ISG1-IT, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany.
4 Institute for Crystal Growth, Max-Born-Straße 2, D-12489 Berlin, Germany.
5 Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109, USA.

* To whom correspondence should be addressed. E-mail: eom{at}engr.wisc.edu

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