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ReportsElastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals  
We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as
1 Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.
* These authors contributed equally to this work.
|| To whom correspondence should be addressed. E-mail: jrogers{at}uiuc.edu
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15 cm2/V·s and subthreshold slopes as low as 2nF·V/decade·cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene. 
Present address: IBM, Yorktown Heights, NY 10598, USA. 
Present address: Cavendish Laboratory, Cambridge CB3 0HE, UK. 
Present address: University of Tokyo, Tokyo 264-8505, Japan. 
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