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Science 23 May 2003:
Vol. 300. no. 5623, pp. 1269 - 1272
DOI: 10.1126/science.1083212
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Reports

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

Kenji Nomura,1,2* Hiromichi Ohta,1 Kazushige Ueda,2 Toshio Kamiya,1,2 Masahiro Hirano,1 Hideo Hosono1,2

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ~106 and a field-effect mobility of ~80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

1 Hosono Transparent ElectroActive Materials, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012, Japan
2 Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan

* To whom correspondence should be addressed. E-mail: nomura{at}lucid.msl.titech.ac.jp

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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Quantum Hall Effect in Polar Oxide Heterostructures.
A. Tsukazaki, A. Ohtomo, T. Kita, Y. Ohno, H. Ohno, and M. Kawasaki (2007)
Science 315, 1388-1391
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Science. ISSN 0036-8075 (print), 1095-9203 (online)