Note to users. If you're seeing this message, it means that your browser cannot find this page's style/presentation instructions -- or possibly that you are using a browser that does not support current Web standards. Find out more about why this message is appearing, and what you can do to make your experience of our site the best it can be.
AAAS Store

Site Tools

  • AAAS
  • Subscribe
  • Feedback

Site Search

Search Advanced

Science 21 March 2003:
Vol. 299. no. 5614, pp. 1881 - 1884
DOI: 10.1126/science.1081279
Prev | Table of Contents | Next

Reports

Self-Aligned, Vertical-Channel, Polymer Field-Effect Transistors

Natalie Stutzmann, Richard H. Friend, Henning Sirringhaus*

The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar and vertical configurations. Embossing is used for the controlled microcutting of vertical sidewalls into polymer multilayer structures without smearing. Vertical-channel polymer field-effect transistors on flexible poly(ethylene terephthalate) substrates were fabricated, in which the critical channel length of 0.7 to 0.9 micrometers was defined by the thickness of a spin-coated insulator layer. Gate electrodes were self-aligned to minimize overlap capacitance by inkjet printing that used the embossed grooves to define a surface-energy pattern.

Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK.
*   To whom correspondence should be addressed. E-mail: hs220{at}phy.cam.ac.uk

Read the Full Text


THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
From the Cover: Organic transistors manufactured using inkjet technology with subfemtoliter accuracy.
T. Sekitani, Y. Noguchi, U. Zschieschang, H. Klauk, and T. Someya (2008)
PNAS 105, 4976-4980
   Abstract »    Full Text »    PDF »
Polymer Gate Dielectric Surface Viscoelasticity Modulates Pentacene Transistor Performance.
C. Kim, A. Facchetti, and T. J. Marks (2007)
Science 318, 76-80
   Abstract »    Full Text »    PDF »
Effect of Chain Structure and Dopant on the Thermal and Optical Properties of Conjugated--non-conjugated Isomeric Polyketanils.
A. Iwan and D. Sek (2007)
High Performance Polymers 19, 194-212
   Abstract »    PDF »
From the Cover: Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes.
T. Someya, Y. Kato, T. Sekitani, S. Iba, Y. Noguchi, Y. Murase, H. Kawaguchi, and T. Sakurai (2005)
PNAS 102, 12321-12325
   Abstract »    Full Text »    PDF »
From The Cover: {sigma}-{pi} molecular dielectric multilayers for low-voltage organic thin-film transistors.
M.-H. Yoon, A. Facchetti, and T. J. Marks (2005)
PNAS 102, 4678-4682
   Abstract »    Full Text »    PDF »
A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications.
T. Someya, T. Sekitani, S. Iba, Y. Kato, H. Kawaguchi, and T. Sakurai (2004)
PNAS 101, 9966-9970
   Abstract »    Full Text »    PDF »


ADVERTISEMENT
Click Me!

ADVERTISEMENT
Click Me!

To Advertise     Find Products