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Science 16 November 2001:
Vol. 294. no. 5546, pp. 1488 - 1495
DOI: 10.1126/science.1065389
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Review

Spintronics: A Spin-Based Electronics Vision for the Future

S. A. Wolf,12* D. D. Awschalom,3 R. A. Buhrman,4 J. M. Daughton,5 S. von Molnár,6 M. L. Roukes,7 A. Y. Chtchelkanova,8 D. M. Treger8

This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

1 Defense Advanced Research Projects Agency (DARPA), 3701 North Fairfax Drive, Arlington, VA 22203, USA.
2 Naval Research Laboratory, Washington, DC 20375, USA.
3 University of California, Department of Physics, Santa Barbara, CA 93106, USA.
4 Cornell University, Applied and Engineering Physics, 211 Clark Hall, Ithaca, NY 14853, USA.
5 NVE, 11409 Valley View Road, Eden Prairie, MN 55344, USA.
6 Florida State University, MARTECH, 406 Keen Building, Tallahassee, FL 32306, USA.
7 California Institute of Technology, Department of Physics, MS-114-36, Pasadena, CA 91125, USA.
8 Strategic Analysis, 3601 Wilson Boulevard, Suite 500, Arlington, VA 22201, USA.
*   To whom correspondence should be addressed. E-mail: swolf{at}darpa.mil

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