Originally published in Science Express on 13 September 2001
Science 5 October 2001:
Vol. 294. no. 5540, pp. 141 - 145
DOI: 10.1126/science.1064148
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Reports
Deposition of Conformal Copper and Nickel Films from Supercritical Carbon Dioxide
Jason M. Blackburn,
David P. Long,
Albertina Cabañas,
James J. Watkins*
Device-quality copper and nickel films were deposited onto planar
and etched silicon substrates by the reduction of soluble organometallic compounds with hydrogen in a supercritical carbon dioxide solution. Exceptional step coverage on complex surfaces and
complete filling of high-aspect-ratio features of less than 100 nanometers width were achieved. Nickel was deposited at 60°C by the
reduction of bis(cyclopentadienyl)nickel and copper was deposited from
either copper(I) or copper(II) compounds onto the native oxide of
silicon or metal nitrides with seed layers at temperatures up to
200°C and directly on each surface at temperatures above 250°C. The
latter approach provides a single-step means for achieving
high-aspect-ratio feature fill necessary for copper interconnect
structures in future generations of integrated circuits.
Department of Chemical Engineering, University of Massachusetts,
Amherst, MA 01003, USA.
*
To whom correspondence should be addressed. E-mail:
watkins{at}ecs.umass.edu
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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
- Mesoporous Silicates Prepared Using Preorganized Templates in Supercritical Fluids.
- R. A. Pai, R. Humayun, M. T. Schulberg, A. Sengupta, J.-N. Sun, and J. J. Watkins (2004)
Science
303, 507-510
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