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We report the realization of an ultraviolet
light-emitting diode with the use of a diamond pn junction. The pn
junction wasformed from a boron-doped p-type diamond layer and
phosphorus-dopedn-type diamond layer grown epitaxially on the
{111} surface ofsingle crystalline diamond. The pn junction
exhibited good diodecharacteristics, and at forward bias of about 20 volts strongultraviolet light emission at 235 nanometers was observed
andwas attributed to free exciton recombination.
1 Advanced Materials Laboratory, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
2 Research Center for Advanced Carbon Materials,
National Institute of Advanced Industrial Science and Technology,
Tsukuba Central 5, Tsukuba 305-8565, Japan
*
To whom correspondence should be addressed. E-mail:
KOIZUMI.satoshi{at}nims.go.jp
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