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Michael H. Huang,1Samuel Mao,2Henning Feick,3Haoquan Yan,1Yiying Wu,1Hannes Kind,1Eicke Weber,3Richard Russo,2Peidong Yang13*
Room-temperature ultraviolet lasing in semiconductor nanowire
arrays has been demonstrated. The self-organized, <0001> orientedzinc oxide nanowires grown on sapphire substrates were synthesizedwith
a simple vapor transport and condensation process. Thesewide band-gap
semiconductor nanowires form natural laser cavitieswith diameters
varying from 20 to 150 nanometers and lengths upto 10 micrometers.
Under optical excitation, surface-emittinglasing action was observed
at 385 nanometers, with an emissionlinewidth less than 0.3 nanometer.
The chemical flexibility andthe one-dimensionality of the nanowires
make them ideal miniaturizedlaser light sources. These
short-wavelength nanolasers could havemyriad applications, including
optical computing, informationstorage, and microanalysis.
1 Department of Chemistry, University of
California,
2 Environmental Energy Technology
Division,
3 Materials Science Division, Lawrence
Berkeley National Laboratory, Berkeley, CA 94720, USA.
*
To whom correspondence should be addressed. E-mail:
pyang{at}cchem.berkeley.edu
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[DOI: 10.1126/science.1061766] |Summary »|Full Text »
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