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Science 2 February 2001:
Vol. 291. no. 5505, pp. 851 - 853
DOI: 10.1126/science.291.5505.851
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Reports

Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

Yi Cui,1 Charles M. Lieber12*

Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.

1 Department of Chemistry and Chemical Biology and
2 Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA.
*   To whom correspondence should be addressed. E-mail: cml{at}cmliris.harvard.edu

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