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Science 12 January 2001:
Vol. 291. no. 5502, pp. 283 - 285
DOI: 10.1126/science.291.5502.283
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Reports

Resonant Electron Scattering by Defects in Single-Walled Carbon Nanotubes

Marc Bockrath,1 Wenjie Liang,2 Dolores Bozovic,1 Jason H. Hafner,2 Charles M. Lieber,2 M. Tinkham,1 Hongkun Park2*

We report the characterization of defects in individual metallic single-walled carbon nanotubes by transport measurements and scanned gate microscopy. A sizable fraction of metallic nanotubes grown by chemical vapor deposition exhibits strongly gate voltage-dependent resistance at room temperature. Scanned gate measurements reveal that this behavior originates from resonant electron scattering by defects in the nanotube as the Fermi level is varied by the gate voltage. The reflection coefficient at the peak of a scattering resonance was determined to be about 0.5 at room temperature. An intratube quantum dot device formed by two defects is demonstrated by low-temperature transport measurements.

1 Department of Physics,
2 Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA.
*   To whom correspondence should be addressed. E-mail: HPark{at}chemistry.harvard.edu

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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Conductance-Controlled Point Functionalization of Single-Walled Carbon Nanotubes.
B. R. Goldsmith, J. G. Coroneus, V. R. Khalap, A. A. Kane, G. A. Weiss, and P. G. Collins (2007)
Science 315, 77-81
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Local Gate Control of a Carbon Nanotube Double Quantum Dot.
N. Mason, M. J. Biercuk, and C. M. Marcus (2004)
Science 303, 655-658
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Scanned Probe Imaging of Single-Electron Charge States in Nanotube Quantum Dots.
M. T. Woodside and P. L. McEuen (2002)
Science 296, 1098-1101
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Carbon Nanotube Single-Electron Transistors at Room Temperature.
H. W. Ch. Postma, T. Teepen, Z. Yao, M. Grifoni, and C. Dekker (2001)
Science 293, 76-79
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