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This article has been retracted

Science 3 November 2000:
Vol. 290. no. 5493, pp. 963 - 965
DOI: 10.1126/science.290.5493.963
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Reports

A Light-Emitting Field-Effect Transistor

J. H. Schön,* A. Dodabalapur,* Ch. Kloc, B. Batlogg

We report here on the structure and operating characteristics of an ambipolar light-emitting field-effect transistor based on single crystals of the organic semiconductor alpha -sexithiophene. Electrons and holes are injected from the source and drain electrodes, respectively. Their concentrations are controlled by the applied gate and drain-source voltages. Excitons are generated, leading to radiative recombination. Moreover, above a remarkably low threshold current, coherent light is emitted through amplified spontaneous emission. Hence, this three-terminal device is the basis of a very promising architecture for electrically driven laser action in organic semiconductors.

Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974, USA.
*   To whom correspondence should be addressed. E-mail: hendrik{at}lucent.com; ananth{at}lucent.com

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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Organic semiconductors: A theoretical characterization of the basic parameters governing charge transport.
J. L. Bredas, J. P. Calbert, D. A. da Silva Filho, and J. Cornil (2002)
PNAS 99, 5804-5809
   Abstract »    Full Text »    PDF »
Organic semiconductors: A theoretical characterization of the basic parameters governing charge transport.
J. L. Bredas, J. P. Calbert, D. A. da Silva Filho, and J. Cornil (2002)
PNAS 99, 5804-5809
   Abstract »    Full Text »    PDF »


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